PART |
Description |
Maker |
PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor N-channel TrenchMOS transistor 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips NXP Semiconductors N.V.
|
PSMN015-110P PSMN015-110P127 |
Trenchmos (tm) Sta N-channel TrenchMOS SiliconMAX standard level FET
|
NXP Semiconductors N.V.
|
PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK6226-75C BUK6226-75C-15 |
N-channel TrenchMOS FET N-channel TrenchMOS FET Rev. 01 ?4 October 2010
|
NXP Semiconductors N.V.
|
IRF630S IRF630 |
N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK7505-30A BUK7505-30A_2 |
TrenchMOS transistor Standard level FET 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system TrenchMOS TM transistor TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3 N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3 N-channel TrenchMOS TM transistor Logic level FET N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 From old datasheet system TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|